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| BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation Rev. 03 -- 10 September 2007 Product data sheet 1. Product profile 1.1 General description Passivated, guaranteed commutation triacs in a plastic package. The `sensitive gate' E and ER series are intended for interfacing with low power drivers, including microcontrollers. The high commutation B series are designed to commutate the full RMS current at the maximum junction temperature without the aid of a snubber. 1.2 Features I Suitable for interfacing with low power drivers, including microcontrollers I Reverse pinning option (ER type) 1.3 Applications I Motor controls I Solenoid drivers 1.4 Quick reference data I I I I I I ITSM 12.5 A VDRM 600 V (BTA201-600B) VDRM 600 V (BTA201-600E) VDRM 800 V (BTA201-800B) VDRM 800 V (BTA201-800E) VDRM 800 V (BTA201-800ER) I I I I I I IT(RMS) 1 A IGT 50 mA (BTA201-600B) IGT 10 mA (BTA201-600E) IGT 50 mA (BTA201-800B) IGT 10 mA (BTA201-800E) IGT 10 mA (BTA201-800ER) 2. Pinning information Table 1. Pin B and E series 1 2 3 ER series 1 2 3 main terminal 1 (T1) gate (G) main terminal 2 (T2) 321 Pinning Description main terminal 2 (T2) gate (G) main terminal 1 (T1) Simplified outline Symbol T2 sym051 T1 G SOT54 (TO-92) NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Package Name BTA201-600B BTA201-600E BTA201-800B BTA201-800E BTA201-800ER TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM Parameter repetitive peak off-state voltage BTA201-600B BTA201-600E BTA201-800B BTA201-800E BTA201-800ER IT(RMS) ITSM RMS on-state current non-repetitive peak on-state current full sine wave; Tlead 54.3 C; see Figure 4 and 5 full sine wave; Tj = 25 C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t dIT/dt IGM PGM PG(AV) Tstg Tj [1] [1] [1] Conditions Min - Max 600 600 800 800 800 1 Unit V V V V V A - 12.5 13.7 0.78 100 2 5 0.1 +150 125 A A A2s A/s A W W C C I2t for fusing rate of rise of on-state current peak gate current peak gate power average gate power storage temperature junction temperature t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/s over any 20 ms period -40 - Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/s. BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 2 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 1.5 Ptot (W) 1.0 001aag957 = 180 120 90 60 30 0.5 0 0 0.2 0.4 0.6 0.8 1.0 IT(RMS) (A) 1.2 = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 16 ITSM (A) 12 001aag959 8 IT 4 ITSM t T Tj(init) = 25 C max 0 1 10 102 number of cycles (n) 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 3 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 103 IT ITSM (A) 001aag958 ITSM t T Tj(init) = 25 C max (1) 102 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values 001aag961 3 IT(RMS) (A) 2 1.2 IT(RMS) (A) 1.0 001aag960 54.3 C 0.8 0.6 1 0.4 0.2 0 10-2 10-1 1 10 surge duration (s) 0 -50 0 50 100 150 Tlead (C) f = 50 Hz; Tlead 54.3 C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of lead temperature; maximum values BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 4 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 5. Thermal characteristics Table 4. Symbol Rth(j-lead) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 150 Max 60 80 Unit K/W K/W K/W thermal resistance from junction to full cycle; see Figure 6 lead half cycle; see Figure 6 thermal resistance from junction to printed-circuit board ambient mounted; lead length = 4 mm 102 Zth(j-lead) (K/W) 10 (1) (2) 001aag962 1 10-1 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 (1) Unidirectional (2) Bidirectional Fig 6. Transient thermal impedance from junction to lead as a function of pulse width BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 5 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 6. Static characteristics Table 5. Static characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions BTA201-600B BTA201-800B Min IGT gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ T2+ G- T2- G- IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ T2+ G- T2- G- IH VT VGT holding current on-state voltage gate trigger voltage VD = 12 V; IGT = 0.1 A; see Figure 11 IT = 1.4 A; see Figure 9 VD = 12 V; IT = 0.1 A; see Figure 7 VD = 400 V; IT = 0.1 A; Tj = 125 C ID off-state current VD = VDRM(max); Tj = 125 C 0.2 1.2 0.7 0.3 0.1 30 50 30 30 1.5 1.5 0.5 0.2 1.2 0.7 0.3 0.1 12 20 12 12 1.5 1.5 0.5 mA mA mA mA V V V mA 50 50 50 10 10 10 mA mA mA Typ Max Min BTA201-600E BTA201-800E BTA201-800ER Typ Max Unit BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 6 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Symbol Dynamic characteristics Parameter Conditions BTA201-600B BTA201-800B Min dVD/dt rate of rise of off-state voltage VDM = 67 % VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; dVcom/dt = 20 V/s; gate open circuit VDM = 400 V; Tj = 125 C; dVcom/dt = 10 V/s; gate open circuit tgt gate-controlled turn-on time ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s 1000 Typ Max Min 600 BTA201-600E BTA201-800E BTA201-800ER Typ Max V/s Unit dIcom/dt rate of change of commutating current 12 - - 2.5 - - A/ms 16 - - 3.5 - - A/ms - 2 - - 2 - s 1.6 VGT VGT(25C) 1.2 001aab101 3 IGT IGT(25C) 2 (1) (2) (3) 003aaa959 0.8 1 (3) (2) (1) 0.4 -50 0 50 100 Tj (C) 150 0 -50 0 50 100 Tj (C) 150 (1) T2- G- (2) T2+ G- (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 7 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 2 IT (A) 1.6 003aaa960 3 IL IL(25C) 2 001aab100 1.2 (1) (2) 0.8 (3) 1 0.4 0 0 0.4 0.8 1.2 1.6 2 VT (V) 0 -50 0 50 100 Tj (C) 150 Vo = 1.02 V; Rs = 0.358 (1) Tj = 125 C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values Fig 9. On-state current as a function of on-state voltage 3 IH IH(25C) 2 001aab099 Fig 10. Normalized latching current as a function of junction temperature 003aab834 104 dVD/dt (V/s) 103 (1) (2) 1 102 0 -50 0 50 100 Tj (C) 150 10 0 50 100 Tj C 150 Gate open circuit (1) BTA201 series B (2) BTA201 series E and ER Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 8 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig 13. Package outline SOT54 (TO-92) BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 9 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 9. Revision history Table 7. Revision history Release date 20070910 Data sheet status Product data sheet Change notice Supersedes BTA201_SER_B_E_ER_2 Document ID BTA201_SER_B_E_ER_3 Modifications: * * * * * * The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Descriptive titles have been corrected. Table 3 "Limiting values" on page 2: dIT/dt uprated. Table 6 "Dynamic characteristics" on page 7: dVD/dt uprated. Figure 12 "Critical rate of rise of off-state voltage as a function of junction temperature; minimum values" on page 8: graph updated. Product data sheet BTA201_SER_B_E_ER_1 Figure 4: Figure note corrected Table 6 "Dynamic characteristics" on page 7: Units corrected Figure 12: Figure title corrected Product data sheet - BTA201_SER_B_E_ER_2 Modifications: 20060113 * * * BTA201_SER_B_E_ER_1 (9397 750 15154) 20050825 BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 10 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 10. Legal information 10.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BTA201_SER_B_E_ER_3 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 -- 10 September 2007 11 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 September 2007 Document identifier: BTA201_SER_B_E_ER_3 |
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